Hall Effect

The Hall effect is a phenomenon in which a voltage is generated across a conductor when an electric current flows through it and a magnetic field is applied perpendicular to the direction of the current. This effect was discovered by Edwin Hall in 1879 and has since been widely used in various applications, including measuring magnetic fields, determining carrier concentration and mobility in semiconductors, and as a basis for Hall effect sensors.

Hall effect visualized. The magnetic field in the +z direction causes the electron within the conductor to deflect in the -y direction.

Basic Principle of the Hall Effect

When a current-carrying conductor is placed in a magnetic field perpendicular to the direction of the current, the Lorentz force acts on the charge carriers (electrons or holes) and causes them to accumulate on one side of the conductor. This accumulation of charge creates an electric field, which in turn generates a voltage (Hall voltage) across the conductor.

Hall Voltage and Hall Coefficient

The Hall voltage (V_H) can be expressed as:

V_H = R_H \dfrac{I B}{t_H}

where

  • R_H is the Hall coefficient,
  • I is the current flowing through the conductor,
  • B is the magnetic field strength,
  • t_H is the thickness of the conductor.

The Hall coefficient (R_H) is a material property and is defined as:

R_H = \dfrac{1}{n q}

where

  • n is the charge carrier concentration,
  • q is the elementary charge (1.602 \times 10^{-19} \text{ C} for an electron).

Hall Effect in Semiconductors

In semiconductors, both electrons and holes contribute to the Hall effect. The Hall coefficient for a semiconductor (in a moderate magnetic field) can be expressed as:

R_H = \dfrac{p \mu_p^2 - n \mu_n^2}{q (n \mu_n + p \mu_p)^2}

where

  • n and p are the concentrations of electrons and holes, respectively,
  • \mu_n and \mu_p are the mobilities of electrons and holes, respectively.

Hall Effect Sensors

Hall effect sensors are transducers that convert magnetic field strength into electrical signals. They are commonly used for:

  • Measuring magnetic fields: The Hall voltage generated in a Hall effect sensor is proportional to the magnetic field strength, allowing for accurate measurements of magnetic fields.
  • Position and proximity sensing: By placing a magnet near a Hall effect sensor, the sensor can detect changes in the magnetic field caused by the movement of the magnet, enabling position and proximity sensing.
  • Current sensing: A current-carrying conductor generates a magnetic field proportional to the current. By placing a Hall effect sensor close to the conductor, the sensor can measure the magnetic field and, consequently, the current flowing through the conductor.

Summary

The Hall effect is an essential principle in various applications, such as magnetic field measurements, semiconductor characterization, and sensing technologies. Understanding the fundamental concepts behind the Hall effect, the Hall voltage and Hall coefficient, and their significance in semiconductors and sensor technologies is crucial for students, researchers, and engineers working in the fields of electronics, physics, and materials science.

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Comments

One response to “Hall Effect”

  1. Keith Avatar
    Keith

    Very good explanation!

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